Efeito da pressão em filmes finos de ZnO:Al por RF Magnetron sputtering reativo
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Data
2014-07-16
Autores
Chaves, Michel [UNESP]
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Universidade Estadual Paulista (Unesp)
Resumo
Filme finos de AZO foram sintetizados sobre substratos de vidro utilizando um alvo de Zn-Al (5% at Al) com 99,999% de pureza através da técnica RF magnetron sputtering reativo a temperatura ambiente. As propriedades estruturais, elétricas, ópticas e morfológicas foram investigadas em função da variação da pressão de argônio no intervalo de 10 a 50 mTorr. As análises de DXR revelaram que os filmes obtidos são policristalinos come estrutura hexagonal wurtzita e orientação preferencial no plano (002). Além disso, mostrou que o aumento da pressão, reduziu os valores tensão e ocasionou o aumento da presença de vazios entre os grãos. Para todos os filmes finos obtidos as medidas de transmitância óptica apresentaram valores acima de 80% na região visível do espectro entre 500-700 nm. Já os valores de gap óptico decresceram de 3,68 para 3,55 eV com o aumento da pressão. O filme sintetizado a 10 mTorr apresentou os melhores resultados em termos de densidade de portadores e mobilidade elétrica, sendo os valores 2,68 x 10 cm-3/Vs, respectivamente
Aluminum zinc oxide (AZO) thin films were synthesized on glass substrates by radiofrequency (RF) magnetron sputtering of a Zn-Al (5at% Al) target of 99.999% purity at ambient temperature. The structural, electrical, optical and morphological properties of the films were investigated as a function of the argon pressure, which was varied from 10 to 50 mTorr. X-ray diffraction (XRD) analyses revealed that the films obtained are polycrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. In addition, it was show than an increase in pressure reduced the tension and produced an increase in the inter-grain spaces. For all of the films produced optical transmission was above 80% in the visible region (wavelength between 500 nm and 700 nm). As the system pressure was increased the optical gap fell from 3.68 to 3.55 eV. The film synthesized at 10 mTorr presented the best results in terms of the carrier density and electrical mobility, which were 2.68 x 10 cm-3 and 3.0 cm2/Vs, respectively
Aluminum zinc oxide (AZO) thin films were synthesized on glass substrates by radiofrequency (RF) magnetron sputtering of a Zn-Al (5at% Al) target of 99.999% purity at ambient temperature. The structural, electrical, optical and morphological properties of the films were investigated as a function of the argon pressure, which was varied from 10 to 50 mTorr. X-ray diffraction (XRD) analyses revealed that the films obtained are polycrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. In addition, it was show than an increase in pressure reduced the tension and produced an increase in the inter-grain spaces. For all of the films produced optical transmission was above 80% in the visible region (wavelength between 500 nm and 700 nm). As the system pressure was increased the optical gap fell from 3.68 to 3.55 eV. The film synthesized at 10 mTorr presented the best results in terms of the carrier density and electrical mobility, which were 2.68 x 10 cm-3 and 3.0 cm2/Vs, respectively
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Palavras-chave
Óxido de zinco, Filmes finos, Magnetrons, Zinc oxide
Como citar
CHAVES, Michel. Efeito da pressão em filmes finos de ZnO:Al por RF Magnetron sputtering reativo. 2014. 90 f. Dissertação (mestrado) - Universidade Estadual Paulista Julio de Mesquita Filho, Faculdade de Ciências, 2014.