The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1-xAs nTFETs
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Data
2017-09-01
Autores
Bordallo, Caio C. M.
Martino, Joao Antonio
Agopian, Paula G. D. [UNESP]
Alian, Alireza
Mols, Yves
Rooyackers, Rita
Vandooren, Anne
Verhulst, Anne S.
Simoen, Eddy
Claeys, Cor
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Ieee-inst Electrical Electronics Engineers Inc
Resumo
The basic analog parameters of three splits of InxGa1 - xAs nTFETs are analyzed for the first time. The first two splits are In0.53Ga0.47As devices with a 3-nm HfO2/1-nm Al2O3 and a 2-nm HfO2/1-nm Al2O3, while the last one is an In0.7Ga0.3As channel with a 3-nm HfO2/1-nm Al2O3 gate. The lowequivalentoxide thicknessimproves the electrostatic coupling, enhancing I-DS, and, consequently, also gm and A(V), especially for higher V-GS. The InGaAs tunnel field-effect transistors (TFETs) show compatible performance with Si TFETs, and have better performance than Si MOSFETs, making them useful for low-power and lowvoltage analog applications. The highest efficiency is found using the combination of a 2-nm HfO2 with In0.53Ga0.47As, due to the 56-mV/dec subthreshold swing obtained. For all splits, the A(V) peak can be related to the V-GS necessary for band-to-band tunneling to become the dominant transport mechanism.
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Analog parameters, current conduction mechanisms, intrinsic voltage gain, sub-60 mV/dec, tunnel field-effect transistors (TFET)
Como citar
Ieee Transactions On Electron Devices. Piscataway: Ieee-inst Electrical Electronics Engineers Inc, v. 64, n. 9, p. 3588-3593, 2017.