Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
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Data
2017-09-01
Autores
Fernandez-Garrido, Sergio
Ramsteiner, Manfred
Gao, Guanhui
Galves, Lauren A.
Sharma, Bharat
Corfdir, Pierre
Calabrese, Gabriele
Schiaber, Ziani de Souza [UNESP]
Pfueller, Carsten
Trampert, Achim
Título da Revista
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Editor
Amer Chemical Soc
Resumo
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on,graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers. Because graphene is found to be etched under active N exposure, the direct growth of GaN nanowires on graphene is only achieved on multilayer graphene structures. The analysis of the nano-wire ensembles prepared on multilayer graphene by Raman spectroscopy and transmission electron microscopy reveals the presence of graphene underneath as well as in between nanowires, as desired for the use of this material as contact layer in nanowire-based nucleate preferentially at step edges, are vertical, well aligned, epitaxial, and of comparable structural quality as similar structures fabricated on conventional substrates.
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Palavras-chave
Single-layer graphene, bilayer graphene, multilayer graphene, nanocolumn, nanorod, III-V compound semiconductors, nitrides, growth
Como citar
Nano Letters. Washington: Amer Chemical Soc, v. 17, n. 9, p. 5213-5221, 2017.