Show simple item record

dc.contributor.authorMelo, M. [UNESP]
dc.contributor.authorAraujo, E. B. [UNESP]
dc.contributor.authorIvanov, M.
dc.contributor.authorShur, V. Y.
dc.contributor.authorKholkin, A. L.
dc.date.accessioned2018-12-11T16:44:26Z
dc.date.available2018-12-11T16:44:26Z
dc.date.issued2016-09-27
dc.identifierhttp://dx.doi.org/10.1109/ISAF.2016.7578084
dc.identifier.citation2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016.
dc.identifier.urihttp://hdl.handle.net/11449/169095
dc.description.abstractRandomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above Tm ∼ 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant τ increases from 404 to 977 ms as the magnitude voltage increases.en
dc.language.isoeng
dc.relation.ispartof2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop, ISAF/ECAPD/PFM 2016
dc.sourceScopus
dc.subjectpiezoresponse
dc.subjectpolarization relaxation
dc.subjectSBN films
dc.titleNanoscale polarization relaxation and piezoelectric properties of SBN thin filmsen
dc.typeTrabalho apresentado em evento
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.contributor.institutionUniversity of Aveiro
dc.contributor.institutionUral Federal University
dc.description.affiliationDepartment of Physics and Chemistry São Paulo State University (UNESP)
dc.description.affiliationDepartment of Physics and CICECO University of Aveiro
dc.description.affiliationInstitute of Natural Sciences Ural Federal University
dc.description.affiliationUnespDepartment of Physics and Chemistry São Paulo State University (UNESP)
dc.identifier.doi10.1109/ISAF.2016.7578084
dc.rights.accessRightsAcesso aberto
dc.identifier.scopus2-s2.0-84994180663
Localize o texto completo

Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record