Publicação: New approach for removing the self-heating from MOSFET current using only DC characteristics
Carregando...
Data
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Tipo
Trabalho apresentado em evento
Direito de acesso
Acesso restrito
Resumo
In this paper we report a new technique for removing the self-heating from the DC output characteristics of a MOSFET. In this method, the self-heating is eliminated from the drain current through a mathematical procedure, allowing a direct comparison of the curves with and without self-heating. We developed an analytical model considering the temperature increase in the channel of devices due to self-heating which causes the mobility degradation. To apply this technique, the inverse transistor efficiency method was employed to obtain the thermal resistance (using only DC measurements) and the temperature mobility degradation factor. In the worst case for tridimensional simulations of Silicon-On-Insulator FinFET devices, we obtained an error of 3.6% between the drain current with the self-heating eliminated through our method and the current without selfheating. Additionally, when we applied the method to devices without self-heating, the drain current presented no changes, showing that the method can determine if a device is self-heating free or not.
Descrição
Palavras-chave
FinFET, Self-heating effect, Silicon-On-Insulator
Idioma
Inglês
Como citar
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018.
