A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs
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The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high (Delta V-T approximate to 200-300mV - for W-NW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.
How to cite this document
Silva, Vanessa C. P. et al. A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs. 2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019. Available at: <http://hdl.handle.net/11449/195386>.