Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
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Data
2019-01-01
Autores
Mori, C. A. B.
Agopian, P. G. D. [UNESP]
Martino, J. A.
IEEE
Título da Revista
ISSN da Revista
Título de Volume
Editor
Ieee
Resumo
In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.
Descrição
Palavras-chave
Tunnel Field Effect Transistor (TFET), Silicon-On-Insulator (SOI), Ultra-Thin Body and Buried oxide (UTBB)
Como citar
2019 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis). New York: Ieee, 3 p., 2019.