Amorphous lead titanate: A new wide-band gap semiconductor with photoluminescence at room temperature

Abstract

This paper describes a new amorphous wide-band gap semiconductor with photoluminescence (PL) at room temperature. The amorphous PbTiO3 was prepared by a sol-gel-like process in powder and thin film form. The optical property and the PL behaviour showed a direct relation to the amorphous structure. The PL peak energy can be controlled by the change of the exciting surge energy. Copyright © 2000 John Wiley & Sons, Ltd.