Low-Noise Amplifier for Deep-Brain Stimulation (DBS)
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Data
2022-03-01
Autores
Nordi, Tiago Matheus
Gounella, Rodrigo Henrique
Luppe, Maximiliam
Junior, João Navarro Soares
Fonoff, Erich Talamoni
Colombari, Eduardo [UNESP]
Romero, Murilo Araujo
Do Carmo, João Paulo Pereira
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Resumo
Deep-brain stimulation (DBS) is an emerging research topic aiming to improve the quality of life of patients with brain diseases, and a great deal of effort has been focused on the development of implantable devices. This paper presents a low-noise amplifier (LNA) for the acquisition of biopotentials on DBS. This electronic module was designed in a low-voltage/low-power CMOS process, targeting implantable applications. The measurement results showed a gain of 38.6 dB and a −3 dB bandwidth of 2.3 kHz. The measurements also showed a power consumption of 2.8 µW. Simulations showed an input-referred noise of 6.2 µVRMS . The LNA occupies a microdevice area of 122 µm × 283 µm, supporting its application in implanted systems.
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Palavras-chave
CMOS, Deep-brain stimulation (DBS), Implantable devices, Low-noise amplifier
Como citar
Electronics (Switzerland), v. 11, n. 6, 2022.