Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method
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Data
2006-07-01
Autores
Simoes, A. Z.
Ramirez, M. A.
Riccardi, C. S.
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
Título da Revista
ISSN da Revista
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Editor
Elsevier B.V.
Resumo
Ferroelectric SrBi4Ti4O15 thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. Atomic force microscopy (AFM) analyses showed that the surface of these films is smooth, dense and crack-free with low surface roughness (6.4 nm). At room temperature and at a frequency of 1 MHz, the dielectric constant and the dissipation factor were, respectively, 150 and 0.022. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behaviour. The remanent polarization and coercive field for the films deposited were 5.4 mu C/cm(2) and 8 5 kV/cm, respectively. All the capacitors showed good polarization fatigue characteristics at least up to 1 x 10(10) bipolar pulse cycles indicating that SrBi4Ti4O15 thin films can be a promising material for use in nonvolatile memories. (c) 2005 Elsevier B.V. All rights reserved.
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thin films, atomic force microscopy, dielectric properties, fatigue
Como citar
Materials Letters. Amsterdam: Elsevier B.V., v. 60, n. 16, p. 2020-2023, 2006.