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dc.contributor.authorLaureto, E.
dc.contributor.authorMeneses, E. A.
dc.contributor.authorCarvalho Jr., W.
dc.contributor.authorBernussi, A. A.
dc.contributor.authorRibeiro, E.
dc.contributor.authorSilva, E. C. F. da
dc.contributor.authorOliveira, José Brás Barreto de [UNESP]
dc.date.accessioned2014-05-20T15:15:39Z
dc.date.available2014-05-20T15:15:39Z
dc.date.issued2002-06-01
dc.identifierhttp://dx.doi.org/10.1590/S0103-97332002000200017
dc.identifier.citationBrazilian Journal of Physics. Sociedade Brasileira de Física, v. 32, n. 2a, p. 314-317, 2002.
dc.identifier.issn0103-9733
dc.identifier.urihttp://hdl.handle.net/11449/29728
dc.description.abstractPhotoluminescence (PL) and excitation PL measurements have been performed at different temperatures in a number of lattice-matched GaAs/In0.49Ga0.51P quantum wells, where the uctuations of the potential energy are comparable with the thermal energy of the photocreated carriers. Two samples with different well widths allow to observe a series of anomalous e ects in their optical response. The observed effects are related to the disorder in the interface, characterizing uctuations in the confinement potential energy. It is proposed that the carrier relaxation processes occur either at the local minima or at the absolute minimum of the confinement potential, depending on the ratio of the thermal energy and the magnitude of the potential fluctuations.en
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.format.extent314-317
dc.language.isoeng
dc.publisherSociedade Brasileira de Física
dc.relation.ispartofBrazilian Journal of Physics
dc.sourceSciELO
dc.titleOptical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wellsen
dc.typeArtigo
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.contributor.institutionLaboratório Nacional de Luz Síncrotron
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.description.affiliationUniversidade Estadual de Campinas Instituto de Física 'Gleb Wataghin'
dc.description.affiliationLaboratório Nacional de Luz Síncrotron
dc.description.affiliationUniversidade de São Paulo Instituto de Física
dc.description.affiliationUniversidade Estadual Paulista Departamento de Física
dc.description.affiliationUnespUniversidade Estadual Paulista Departamento de Física
dc.identifier.doi10.1590/S0103-97332002000200017
dc.identifier.scieloS0103-97332002000200017
dc.rights.accessRightsAcesso aberto
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências, Baurupt
dc.identifier.fileS0103-97332002000200017.pdf
dc.identifier.lattes6977466698742311
unesp.author.lattes6977466698742311
dc.relation.ispartofjcr1.082
dc.relation.ispartofsjr0,276
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