Structural characterization of undoped and Sb-doped SnO2 thin films fired at different temperatures
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Data
2003-06-01
Autores
Rizzato, A. P.
Santilli, Celso Valentim [UNESP]
Pulcinelli, Sandra Helena [UNESP]
Craievich, A. F.
Título da Revista
ISSN da Revista
Título de Volume
Editor
Blackwell Munksgaard
Resumo
SnO2 thin films were obtained by the sol-gel method starting from inorganic precursor solutions. In this work, we compare the structure of undoped and Sb-doped SnO2 films prepared by dip-coating. The films were deposited on quartz substrates and then fired at different temperatures ranging from 383 up to 1173 K. The density and the thickness of the films were determined by X-ray reflectivity (XRR) and their porous nanostructure was characterized by grazing-incidence small angle X-ray scattering (GISAXS). XRR results corresponding to undoped and Sb-doped samples indicate a monotonous decrease in film thickness when they are fired at increasing temperatures. At same time, the apparent density of undoped samples exhibits a progressive increase while for Sb-doped films it remains invariant up to 973 K and then increases for T = 1173 K. Anisotropic GISAXS patterns of both films, Sb-doped and undoped, fired above 573 K indicate the presence of elongated pores with their major axis perpendicular to the film surface. For all firing temperatures the nanopores in doped samples are larger than in undoped ones. This suggests that Sb-doping favours the pore growth hindering the film densification. At the highest firing temperature (1173 K) this effect is reversed.
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Palavras-chave
SnO2 thin films, Sb-doped, GISAXS, XRR
Como citar
Journal of Applied Crystallography. Copenhagen: Blackwell Munksgaard, v. 36, n. 1, p. 736-739, 2003.