Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method
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Data
2008-11-15
Autores
Simões, Alexandre Zirpoli [UNESP]
Aguiar, E. C. [UNESP]
Gonzalez, A. H. M. [UNESP]
Andres, J.
Longo, Elson [UNESP]
Varela, José Arana [UNESP]
Título da Revista
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Título de Volume
Editor
American Institute of Physics (AIP)
Resumo
Pure and lanthanum modified BFO (LaxBi1-xFeO3, x=0.0, 0.08, 0.15, 0.30) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system.
Descrição
Palavras-chave
annealing, antiferromagnetic materials, atomic force microscopy, bismuth compounds, dielectric polarisation, ferroelectric switching, ferroelectric thin films, lanthanum compounds, leakage currents, multiferroics, piezoelectricity, platinum, Raman spectra, scanning electron microscopy, silicon, silicon compounds, titanium, X-ray diffraction
Como citar
Journal of Applied Physics. Melville: Amer Inst Physics, v. 104, n. 10, p. 6, 2008.