Temperature influence on Operational Transconductance Amplifier designed with triple gate TFET

Abstract

This paper presents the temperature influence on Operational Transconductance Amplifier (OTA) designed with triple gate Tunnel-FET (TFET). To simulate the OTA circuit, it was used the lookup table approach in Verilog-A language using experimental data at room temperature. The circuit was designed with TFET in inversion region with gm/ID value of 6V-1. The circuit analysis was conducted under the temperatures of 300K, 360K and 420K and it was verified the impact of using a current mirror bias circuit with or without thermal compensation. From the results it is possible to imply that the TFET transistors are very interesting for this kind of circuit due to that they have a very low power consumption and a high voltage gain when comparing to OTA using conventional MOS transistors. Another important observation is that by using a current bias circuit with temperature compensation, the total gain of the circuit slightly increases instead of decreasing with the higher temperature.