Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K

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dc.contributor.authorCaparroz, Luis Felipe Vicentis
dc.contributor.authorBordallo, Caio Cesar Mendes
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorDer Agopian, Paula Ghedini [UNESP]
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionImec
dc.contributor.institutionKU Leuven
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T16:53:51Z
dc.date.available2018-12-11T16:53:51Z
dc.date.issued2018-04-25
dc.description.abstractThis paper studies the main low temperature electrical parameters of SOI n- and p-type FinFETs, standard and strained devices, submitted to proton irradiation. The study covers the range from room temperature down to 100 K, focusing on the threshold voltage (VTH), subthreshold swing (SS), the Early voltage VEA, transistor efficiency and the intrinsic gain voltage (AV) for 3 different channel widths. The p-channel devices showed a greater immunity to radiation than the n-channel ones, when considering the basic parameters thanks to the back conduction turn-off tendency, while from the analog parameters point of view, both transistor types presented a similar response to proton radiation at strong inversion.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationImec
dc.description.affiliationE.E. Dept KU Leuven
dc.description.affiliationUNESP Universidade Estadual Paulista
dc.description.affiliationUnespUNESP Universidade Estadual Paulista
dc.identifierhttp://dx.doi.org/10.1088/1361-6641/aabab3
dc.identifier.citationSemiconductor Science and Technology, v. 33, n. 6, 2018.
dc.identifier.doi10.1088/1361-6641/aabab3
dc.identifier.file2-s2.0-85048146882.pdf
dc.identifier.issn1361-6641
dc.identifier.issn0268-1242
dc.identifier.scopus2-s2.0-85048146882
dc.identifier.urihttp://hdl.handle.net/11449/171088
dc.language.isoeng
dc.relation.ispartofSemiconductor Science and Technology
dc.relation.ispartofsjr0,757
dc.relation.ispartofsjr0,757
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectFinFETs
dc.subjectlow temperature
dc.subjectproton radiation
dc.subjectstrained devices
dc.titleAnalysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 Ken
dc.typeArtigo
unesp.author.orcid0000-0002-0886-7798[6]

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