Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method

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dc.contributor.authorMarques, L. G. A.
dc.contributor.authorCavalcante, L. S.
dc.contributor.authorSimoes, A. Z.
dc.contributor.authorPontes, F. M.
dc.contributor.authorSantos-Junior, L. S.
dc.contributor.authorSantos, M. R. M. C.
dc.contributor.authorRosa, I. L. V.
dc.contributor.authorVarela, José Arana [UNESP]
dc.contributor.authorLongo, Elson [UNESP]
dc.contributor.institutionUniversidade Federal de São Carlos (UFSCar)
dc.contributor.institutionUniversidade Federal do Piauí (UFPI)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T14:17:57Z
dc.date.available2014-05-20T14:17:57Z
dc.date.issued2007-10-15
dc.description.abstractBa(Zr0.25Ti0.75)O-3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 degrees C for 4h. All films crystallized in the perovskite structure present a crack-free microstructure. Dielectric properties of the BZT thin films were investigated as a function of frequency and applied voltage. The dielectric constant of the films were 36, 152 and 145 at 1 kHz, while the dielectric loss were 0.08, 0.08, and 0.12 at 1 MHz. (c) 2007 Elsevier B.V. All rights reserved.en
dc.description.affiliationUniv Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP, Brazil
dc.description.affiliationUniv Fed Piaui, Dept Quim, Ctr Ciências Nat, BR-64049550 Teresina, PI, Brazil
dc.description.affiliationUniv Estadual Paulista, Dept Quim, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUniv Estadual Paulista, Inst Quim, Dept Quim Fis, Lab Interdisciplinar Ceram, BR-14801907 Araraquara, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Dept Quim, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Inst Quim, Dept Quim Fis, Lab Interdisciplinar Ceram, BR-14801907 Araraquara, SP, Brazil
dc.format.extent293-297
dc.identifierhttp://dx.doi.org/10.1016/j.matchemphys.2007.04.065
dc.identifier.citationMaterials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 105, n. 2-3, p. 293-297, 2007.
dc.identifier.doi10.1016/j.matchemphys.2007.04.065
dc.identifier.issn0254-0584
dc.identifier.urihttp://hdl.handle.net/11449/25390
dc.identifier.wosWOS:000250278300029
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofMaterials Chemistry and Physics
dc.relation.ispartofjcr2.210
dc.relation.ispartofsjr0,615
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectdielectric propertiespt
dc.subjectBZTpt
dc.subjectthin filmspt
dc.subjecttemperature dependencept
dc.titleTemperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical methoden
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes3573363486614904[3]
unesp.author.orcid0000-0003-2535-2187[3]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Química, Araraquarapt
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt
unesp.departmentQuímica - FCpt
unesp.departmentFísico-Química - IQARpt

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Bauru - FC - Faculdade de Ciências
Araraquara - IQAR - Instituto de Química