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Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors

dc.contributor.authorTaylor, D. M.
dc.contributor.authorAlves, Neri [UNESP]
dc.contributor.institutionBangor Univ
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:23:00Z
dc.date.available2014-05-20T13:23:00Z
dc.date.issued2008-03-01
dc.description.abstractA simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the features observed in a MIS capacitor fabricated using regioregular poly(3-hexylthiophene) as the active semiconductor and polysilsesquioxane as the gate insulator. In particular, it shows that when the capacitor is driven into accumulation, the parasitic transistor formed by the guard ring and Ohmic contact can give rise to an additional feature in the admittance-voltage plot that could be mistaken for interface states. When this artifact and underlying losses in the bulk semiconductor are accounted for, the remaining experimental feature, a peak in the loss-voltage plot when the capacitor is in depletion, is identified as an interface (or near interface) state of density of similar to 4 x 10(10) cm(-2) eV(-1). Application of the model shows that exposure of a vacuum-annealed device to laboratory air produces a rapid change in the doping density in the channel region of the parasitic transistor but only slow changes in the bulk semiconductor covered by the gold Ohmic contact. (C) 2008 American Institute of Physics.en
dc.description.affiliationBangor Univ, Sch Elect Engn, Bangor LL57 1UT, Gwynedd, Wales
dc.description.affiliationUniv Estadual Paulista, Fac Ciencias & Tecnol, BR-19060900 São Paulo, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Fac Ciencias & Tecnol, BR-19060900 São Paulo, Brazil
dc.format.extent6
dc.identifierhttp://dx.doi.org/10.1063/1.2844435
dc.identifier.citationJournal of Applied Physics. Melville: Amer Inst Physics, v. 103, n. 5, p. 6, 2008.
dc.identifier.doi10.1063/1.2844435
dc.identifier.fileWOS000254025000098.pdf
dc.identifier.issn0021-8979
dc.identifier.lattes7607651111619269
dc.identifier.orcid0000-0001-8001-301X
dc.identifier.urihttp://hdl.handle.net/11449/6849
dc.identifier.wosWOS:000254025000098
dc.language.isoeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relation.ispartofJournal of Applied Physics
dc.relation.ispartofjcr2.176
dc.relation.ispartofsjr0,739
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleSeparating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitorsen
dc.typeArtigo
dcterms.licensehttp://www.aip.org/pubservs/web_posting_guidelines.html
dcterms.rightsHolderAmer Inst Physics
unesp.author.lattes7607651111619269
unesp.author.orcid0000-0001-8001-301X[2]
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências e Tecnologia, Presidente Prudentept
unesp.departmentFísica, Química e Biologia - FCTpt

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