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Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technology

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dc.contributor.authorMartins, E. [UNESP]
dc.contributor.authorGomes, M. V. G.
dc.contributor.authorBastida, E. M.
dc.contributor.authorSwart, J. W.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:25:24Z
dc.date.available2014-05-20T15:25:24Z
dc.date.issued1999-01-01
dc.description.abstractThe design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz receiver front end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz, LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.en
dc.description.affiliationUNESP, FEG, São Paulo, Brazil
dc.description.affiliationUnespUNESP, FEG, São Paulo, Brazil
dc.format.extent267-270
dc.identifierhttp://dx.doi.org/10.1109/IMOC.1999.867106
dc.identifier.citation1999 Sbmo/ieee Mtt-s International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2. New York: IEEE, p. 267-270, 1999.
dc.identifier.doi10.1109/IMOC.1999.867106
dc.identifier.urihttp://hdl.handle.net/11449/35835
dc.identifier.wosWOS:000089938100061
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartof1999 Sbmo/ieee Mtt-s International Microwave and Optoelectronics Conference, Proceedings, Vols 1 & 2
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectGilbert Cell Mixerspt
dc.subjectLNAspt
dc.subjectFront-end receiverspt
dc.subjectPHEMTspt
dc.titleDesign of a LNA and a Gilbert Cell Mixer MMICs with a GaAsPHEMT technologyen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIEEE

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