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Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic

dc.contributor.authorTorres, H. L.F.
dc.contributor.authorMartino, J. A.
dc.contributor.authorRooyackers, R.
dc.contributor.authorVandooren, A.
dc.contributor.authorSimoen, E.
dc.contributor.authorClaeys, C.
dc.contributor.authorAgopian, P. G.D. [UNESP]
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionImec
dc.contributor.institutionKU Leuven
dc.date.accessioned2018-12-11T16:51:18Z
dc.date.available2018-12-11T16:51:18Z
dc.date.issued2017-11-15
dc.description.abstractThis paper reports for the first time the study of radiation effects on triple gate SOI tunnel FETs. In this work, devices with 1 μm width and three different channel lengths were exposed to a 600 keV proton radiation source and their current-voltage behavior was analyzed after 1 Mrad(Si) of accumulated total dose, comparing the results obtained before and after irradiation. It was possible to notice a drain current decrease in the shorter channel devices. However, this total dose influence was not so prominent in the longer channel ones. The reasons for both phenomena is discussed based on the competition between the drain current split and the high channel resistance.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationSao Paulo State University (UNESP)
dc.description.affiliationImec
dc.description.affiliationE.E. Dept. KU Leuven
dc.description.affiliationUnespSao Paulo State University (UNESP)
dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2017.8112973
dc.identifier.citationSBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum.
dc.identifier.doi10.1109/SBMicro.2017.8112973
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85040606666
dc.identifier.urihttp://hdl.handle.net/11449/170558
dc.language.isoeng
dc.relation.ispartofSBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectCharacterization
dc.subjectProton radiation
dc.subjectSOI
dc.subjectTFET
dc.titleProton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristicen
dc.typeTrabalho apresentado em evento
unesp.author.lattes0496909595465696[7]
unesp.author.orcid0000-0002-0886-7798[7]

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