Er-doped silica-based waveguides prepared by different techniques: RF-sputtering, sol-gel and ion-exchange

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dc.contributor.authorRighini, G. C.
dc.contributor.authorPelli, S.
dc.contributor.authorFerrari, M.
dc.contributor.authorArmellini, C.
dc.contributor.authorZampedri, L.
dc.contributor.authorTosello, C.
dc.contributor.authorRonchin, S.
dc.contributor.authorRolli, R.
dc.contributor.authorMoser, E.
dc.contributor.authorMontagna, M.
dc.contributor.authorChiasera, A.
dc.contributor.authorRibeiro, SJL
dc.contributor.institutionCNR
dc.contributor.institutionUniv Trent
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:24:39Z
dc.date.available2014-05-20T15:24:39Z
dc.date.issued2002-12-01
dc.description.abstractErbium-activated silica-based planar waveguides were prepared by three different technological routes: RF-sputtering, sol-gel and ion exchange. Various parameters of preparation were varied in order to optimize the waveguides for operation in the NIR region. Particular attention was devoted to the minimization of the losses and the increase of the luminescence efficiency of the metastable I-4(13/2) state of the Er3+ ion. Waveguide properties were determined by m-line spectroscopy and loss measurements. Waveguide Raman and luminescence spectroscopy were used to obtain information about the structure of the prepared films and about the dynamical processes related to the luminescence of the Er3+ ions.en
dc.description.affiliationCNR, IROE, Optoelect & Photon Dept, I-50127 Florence, Italy
dc.description.affiliationCNR, CeFSA, Ctr Fis Stati Aggregati, I-38050 Povo, Italy
dc.description.affiliationUniv Trent, Dipartimento Fis, I-38050 Povo, Italy
dc.description.affiliationUniv Trent, INFM, I-38050 Povo, Italy
dc.description.affiliationUNESP, Inst Quim, BR-14801970 Arraquara, Brazil
dc.description.affiliationUnespUNESP, Inst Quim, BR-14801970 Arraquara, Brazil
dc.format.extent1151-1166
dc.identifierhttp://dx.doi.org/10.1023/A:1021338906917
dc.identifier.citationOptical and Quantum Electronics. Dordrecht: Kluwer Academic Publ, v. 34, n. 12, p. 1151-1166, 2002.
dc.identifier.doi10.1023/A:1021338906917
dc.identifier.issn0306-8919
dc.identifier.urihttp://hdl.handle.net/11449/35230
dc.identifier.wosWOS:000179569200001
dc.language.isoeng
dc.publisherKluwer Academic Publ
dc.relation.ispartofOptical and Quantum Electronics
dc.relation.ispartofjcr1.168
dc.relation.ispartofsjr0,353
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectdip-coatingpt
dc.subjecterbiumpt
dc.subjection-exchangept
dc.subjectluminescence spectroscopypt
dc.subjectoptical amplificationpt
dc.subjectoptical waveguidespt
dc.subjectRaman spectroscopypt
dc.subjectRF-sputteringpt
dc.subjectsilicate glassespt
dc.subjectupconversionpt
dc.titleEr-doped silica-based waveguides prepared by different techniques: RF-sputtering, sol-gel and ion-exchangeen
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights
dcterms.rightsHolderKluwer Academic Publ
unesp.author.orcid0000-0003-3723-5957[3]
unesp.author.orcid0000-0002-6081-6971[1]
unesp.author.orcid0000-0002-8162-6747[12]
unesp.author.orcid0000-0003-3286-9440[12]
unesp.author.orcid0000-0002-6960-5003[2]
unesp.author.orcid0000-0002-7981-6584[11]

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