Crystallization of amorphous GaAs films prepared onto different substrates

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2002-04-01

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This work reports changes in structural properties produced by thermal annealing of flash evaporated amorphous GaAs films using the micro-Raman scattering and the X-ray diffraction (XRD) techniques. Films of about 1 μm were grown on c-Si and glass substrates. The crystallization process is less effective for samples deposited on c-Si. This could be due to the ordering in the first layers of the film imposed by the oriented Si substrates. We propose that this ordering makes the growth of crystallites in these films more restrained than the growth occurring in the completely amorphous films on glass substrates. © 2002 Elsevier Science B.V. All rights reserved.

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Annealing, Crystalline materials, Crystallization, Film growth, Glass, Raman scattering, Semiconducting gallium arsenide, Substrates, X ray diffraction analysis, Thermal annealing, Amorphous films

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Inglês

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Journal of Non-Crystalline Solids, v. 299-302, n. PART 2, p. 788-792, 2002.

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http://hdl.handle.net/11449/66857

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Bauru - FC - Faculdade de Ciências