Publicação:
Crystallization of amorphous GaAs films prepared onto different substrates

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dc.contributor.authorCampomanes, R. R. [UNESP]
dc.contributor.authorSilva, José Humberto Dias da [UNESP]
dc.contributor.authorVilcarromero, J. [UNESP]
dc.contributor.authorCardoso, L. P.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.date.accessioned2014-05-27T11:20:27Z
dc.date.available2014-05-27T11:20:27Z
dc.date.issued2002-04-01
dc.description.abstractThis work reports changes in structural properties produced by thermal annealing of flash evaporated amorphous GaAs films using the micro-Raman scattering and the X-ray diffraction (XRD) techniques. Films of about 1 μm were grown on c-Si and glass substrates. The crystallization process is less effective for samples deposited on c-Si. This could be due to the ordering in the first layers of the film imposed by the oriented Si substrates. We propose that this ordering makes the growth of crystallites in these films more restrained than the growth occurring in the completely amorphous films on glass substrates. © 2002 Elsevier Science B.V. All rights reserved.en
dc.description.affiliationDepartamento de Física Faculdade de Ciências Universidade Estadual de São Paulo, CEP 17033-360, Bauru-SP
dc.description.affiliationInstituto de Física Gleb Wataghin Universidade Estadual de Campinas, CP 6165, 13083-970 Campinas-SP
dc.description.affiliationUnespDepartamento de Física Faculdade de Ciências Universidade Estadual de São Paulo, CEP 17033-360, Bauru-SP
dc.format.extent788-792
dc.identifierhttp://dx.doi.org/10.1016/S0022-3093(01)00983-8
dc.identifier.citationJournal of Non-Crystalline Solids, v. 299-302, n. PART 2, p. 788-792, 2002.
dc.identifier.doi10.1016/S0022-3093(01)00983-8
dc.identifier.issn0022-3093
dc.identifier.lattes1134426200935790
dc.identifier.scopus2-s2.0-0036530857
dc.identifier.urihttp://hdl.handle.net/11449/66857
dc.language.isoeng
dc.relation.ispartofJournal of Non-Crystalline Solids
dc.relation.ispartofjcr2.488
dc.relation.ispartofsjr0,722
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectAnnealing
dc.subjectCrystalline materials
dc.subjectCrystallization
dc.subjectFilm growth
dc.subjectGlass
dc.subjectRaman scattering
dc.subjectSemiconducting gallium arsenide
dc.subjectSubstrates
dc.subjectX ray diffraction analysis
dc.subjectThermal annealing
dc.subjectAmorphous films
dc.titleCrystallization of amorphous GaAs films prepared onto different substratesen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dspace.entity.typePublication
unesp.author.lattes1134426200935790
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt

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