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Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs

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dc.contributor.authorPerina, Welder F.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorAgopian, Paula G. D. [UNESP]
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2020-12-12T01:10:02Z
dc.date.available2020-12-12T01:10:02Z
dc.date.issued2019-08-01
dc.description.abstractThis paper shows the influence of channel width (WNW) and channel length (L) on intrinsic voltage gain (AV) and on unit-gain frequency (ft) of omega-gate nanowire SOI MOSFET. The ft is calculated taking into consideration the experimental gate capacitance. The device showed excellent electrostatic control for the WNW of 10 nm, which improved transconductance, consequently, improving both AV and ft. This technology showed values of AV around 80 dB and a ft of over 200 GHz, proving that this device is an excellent for future analog applications like 5G communications and Internet-of-Things (IoT).en
dc.description.affiliationUniversity of Sao Paulo LSI/PSI/USP
dc.description.affiliationUNESP Sao Paulo State University
dc.description.affiliationUnespUNESP Sao Paulo State University
dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2019.8919278
dc.identifier.citationSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.
dc.identifier.doi10.1109/SBMicro.2019.8919278
dc.identifier.scopus2-s2.0-85077213322
dc.identifier.urihttp://hdl.handle.net/11449/198337
dc.language.isoeng
dc.relation.ispartofSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
dc.sourceScopus
dc.subjectIntrinsic Voltage Gain
dc.subjectNanowire
dc.subjectOmega-gate
dc.subjectSOI
dc.subjectUnit-gain Frequency
dc.titleIntrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETsen
dc.typeTrabalho apresentado em evento
dspace.entity.typePublication

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