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Impact of drain doping and biomaterial thickness in a dielectrically modulated fringing field bio-TFET device

dc.contributor.authorMacAmbira, Christian N.
dc.contributor.authorAgopian, Paula G. D. [UNESP]
dc.contributor.authorMartino, Joao A.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2020-12-12T01:09:54Z
dc.date.available2020-12-12T01:09:54Z
dc.date.issued2019-08-01
dc.description.abstractIn this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness (tBio). It is shown that the sensitivity of the Bio-TFET improves as the drain doping concentration increases up to 1 × 1020 cm-3. The tBio influence over the sensitivity increases for thicker biomaterials up to 40 nm and present lower increment for higher tBio. The highest sensitivity value obtained in this work was for a drain doping concentration of 1 × 1020 cm-3 and for biomaterial thickness equal or higher than 40 nm.en
dc.description.affiliationUniversity of Sao Paulo LSI/PSI/USP
dc.description.affiliationUNESP Sao Paulo State University
dc.description.affiliationUnespUNESP Sao Paulo State University
dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2019.8919398
dc.identifier.citationSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.
dc.identifier.doi10.1109/SBMicro.2019.8919398
dc.identifier.scopus2-s2.0-85077189208
dc.identifier.urihttp://hdl.handle.net/11449/198331
dc.language.isoeng
dc.relation.ispartofSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
dc.sourceScopus
dc.subjectBiomaterial thickness
dc.subjectBiosensor
dc.subjectDrain doping
dc.subjectPermittivity
dc.subjectSensitivity
dc.subjectTFET
dc.subjectUnderlap
dc.titleImpact of drain doping and biomaterial thickness in a dielectrically modulated fringing field bio-TFET deviceen
dc.typeTrabalho apresentado em evento

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