Analysis and measurement of the non-linear refractive index of SiOxNy using pedestal waveguides

dc.contributor.authorSierra, Julian H.
dc.contributor.authorCarvalho, Daniel O. [UNESP]
dc.contributor.authorSamad, Ricardo E.
dc.contributor.authorRangel, Ricardo C.
dc.contributor.authorAlayo, Marco
dc.contributor.authorIEEE
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionIPEN CNEN SP
dc.contributor.institutionSao Paulo State Technol Coll FATEC
dc.date.accessioned2020-12-10T17:33:06Z
dc.date.available2020-12-10T17:33:06Z
dc.date.issued2019-01-01
dc.description.abstractIn this work, the non-linear refractive index (n(2)) of silicon oxynitride (SiOxNy) is determined, obtaining a value for this material of n(2) = 2.11x10(-19) m(2)/W. The results demonstrate that this material has interesting properties for the development of non-linear optical devices. The paper presents in detail the waveguide fabrication process using the pedestal technique, which allows using different materials since it does not require etching to define the sidewalls of the waveguides. We show the results of the measurement of the n(2) employing the non-linear optical phenomena of Self-Phase Modulation (SPM).en
dc.description.affiliationUniv Sao Paulo, Polytech Sch, Sao Paulo, Brazil
dc.description.affiliationSao Paulo State Univ UNESP, Telecommun Dept, Sao Joao De Boa Vista, SP, Brazil
dc.description.affiliationIPEN CNEN SP, Ctr Lasers & Applicat, Sao Paulo, Brazil
dc.description.affiliationSao Paulo State Technol Coll FATEC, Sao Paulo, Brazil
dc.description.affiliationUnespSao Paulo State Univ UNESP, Telecommun Dept, Sao Joao De Boa Vista, SP, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipIdCNPq: 432088/2018-0
dc.description.sponsorshipIdCNPq: 305447/2017-3
dc.description.sponsorshipIdCAPES: 88882.333330/2019-01
dc.format.extent5
dc.identifier.citation2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 5 p., 2019.
dc.identifier.urihttp://hdl.handle.net/11449/195391
dc.identifier.wosWOS:000534490900048
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019)
dc.sourceWeb of Science
dc.subjectoptical devices
dc.subjectnon-linear photonics
dc.subjectsilicon oxynitride
dc.subjectself-phase modulation
dc.subjectnon-linear refractive index
dc.subjectintegrated photonics
dc.subjectmicroelectronics
dc.titleAnalysis and measurement of the non-linear refractive index of SiOxNy using pedestal waveguidesen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee

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