Impact of biosensor permittivity on a double-gate nTFET ambipolar current

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dc.contributor.authorMacambira, C. N.
dc.contributor.authorAgopian, P. G.D. [UNESP]
dc.contributor.authorMartino, J. A.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T16:54:29Z
dc.date.available2018-12-11T16:54:29Z
dc.date.issued2018-01-01
dc.description.abstractThe goal of this work is to analyze the effect of gate to drain underlapping on n-type Tunnel-FET (nTFET) devices, filled with different dielectric permittivity material (k) in order to simulate the bio element materials. The results show that the use of Tunnel-FET ambipolar current presents high sensitivity for using it as biosensor devices for transistors with the drain underlap of 15 run and total channel length of 50 nm for the range studied in this paper.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationSao Paulo State University (UNESP)
dc.description.affiliationUnespSao Paulo State University (UNESP)
dc.format.extent187-192
dc.identifierhttp://dx.doi.org/10.1149/08508.0187ecst
dc.identifier.citationECS Transactions, v. 85, n. 8, p. 187-192, 2018.
dc.identifier.doi10.1149/08508.0187ecst
dc.identifier.file2-s2.0-85050150742.pdf
dc.identifier.issn1938-5862
dc.identifier.issn1938-6737
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85050150742
dc.identifier.urihttp://hdl.handle.net/11449/171227
dc.language.isoeng
dc.relation.ispartofECS Transactions
dc.relation.ispartofsjr0,225
dc.relation.ispartofsjr0,225
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.titleImpact of biosensor permittivity on a double-gate nTFET ambipolar currenten
dc.typeTrabalho apresentado em evento
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]

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