Universal zero-bias conductance for the single-electron transistor

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Yoshida, M. [UNESP]
Seridonio, A. C.
Oliveira, L. N.

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Amer Physical Soc


The thermal dependence of the zero-bias conductance for the single electron transistor is the target of two independent renormalization-group approaches, both based on the spin-degenerate Anderson impurity model. The first approach, an analytical derivation, maps the Kondo-regime conductance onto the universal conductance function for the particle-hole symmetric model. Linear, the mapping is parametrized by the Kondo temperature and the charge in the Kondo cloud. The second approach, a numerical renormalization-group computation of the conductance as a function the temperature and applied gate voltages offers a comprehensive view of zero-bias charge transport through the device. The first approach is exact in the Kondo regime; the second, essentially exact throughout the parametric space of the model. For illustrative purposes, conductance curves resulting from the two approaches are compared.



Anderson model, electric admittance, Kondo effect, renormalisation, single electron transistors

Como citar

Physical Review B. College Pk: Amer Physical Soc, v. 80, n. 23, p. 22, 2009.