Publicação:
Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs

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dc.contributor.authorOliveira, A. V.
dc.contributor.authorAgopian, P. G. D. [UNESP]
dc.contributor.authorMartino, J. A.
dc.contributor.authorSimoen, E.
dc.contributor.authorMitard, J.
dc.contributor.authorWitters, L.
dc.contributor.authorCollaert, N.
dc.contributor.authorClaeys, C.
dc.contributor.authorIEEE
dc.contributor.institutionUTFPR
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionIMEC
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionKatholieke Univ Leuven
dc.date.accessioned2019-10-04T19:12:30Z
dc.date.available2019-10-04T19:12:30Z
dc.date.issued2017-01-01
dc.description.abstractThe operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher I-ON over I-OFF ratio for the strained device, achieving around three orders of magnitude higher value than the relaxed channel at 77 K thanks to the strong hole mobility enhancement and thermal deactivation of the off-state current at low temperature.en
dc.description.affiliationUTFPR, Campus Toledo, Apucarana, Brazil
dc.description.affiliationUniv Sao Paulo, PSI, LSI, Sao Paulo, Brazil
dc.description.affiliationIMEC, Leuven, Belgium
dc.description.affiliationUniv Estadual Paulista, Campus Sao Joao Boa Vista, Sao Paulo, Brazil
dc.description.affiliationKatholieke Univ Leuven, EE Dept, Leuven, Belgium
dc.description.affiliationUnespUniv Estadual Paulista, Campus Sao Joao Boa Vista, Sao Paulo, Brazil
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipFWO
dc.description.sponsorshipLogic IIAP program
dc.format.extent3
dc.identifier.citation2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2017.
dc.identifier.issn2573-5926
dc.identifier.urihttp://hdl.handle.net/11449/186356
dc.identifier.wosWOS:000463041500075
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s)
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectFinFET
dc.subjectgermanium channel
dc.subjectlow temperature
dc.subjectI-ON/I-OFF ratio
dc.subjectrelaxed
dc.subjectstrained
dc.titleLow Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETsen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee
dspace.entity.typePublication

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