Study of intense photoluminescence from monodispersed β-Ga2O3 ellipsoidal structures

Rodrigues, Aline V. [UNESP]; Orlandi, Marcelo O. [UNESP]

Study of intense photoluminescence from monodispersed β-Ga2O3 ellipsoidal structures

Data

2019-03-01

Autores

Rodrigues, Aline V.

Orlandi, Marcelo O.

Tipo

Artigo

Direito de acesso

Acesso aberto

Resumo

Monoclinic β-Ga2O3 particles were obtained through the self-assembly mechanism of nanosheets at different temperatures. An ellipsoidal morphology was obtained through precipitation and calcination processes. The influence of synthesis on the structure and morphology of materials was investigated using X-ray diffraction, scanning and transmission electron microscopy, dynamic light scattering, Raman and Fourier-transform infrared (FTIR) spectroscopies. The ellipsoidal morphologies with mesoporous were led by the Ostwald ripening and self-assembly mechanisms. An investigation into their optical properties revealed very broad and intense photoluminescence emission spectra, which were explained by the presence of oxygen vacancies in the structures. The specific surface areas were found to influence emission intensities. Different vibrations of Ga–O bonds in the Raman and FTIR spectra demonstrated two types of Ga3+ ions (GaO6 octahedral and GaO4 tetrahedral chains). The successful synthesis and the high emission intensities in the blue spectral range are representative of the strong potential of β-Ga2O3 particles in the use of optoelectronic devices as light-emitting materials.