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A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs

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dc.contributor.authorSilva, Vanessa C. P.
dc.contributor.authorWirth, Gilson I.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorAgopian, Paula G. D. [UNESP]
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUFRGS
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2020-12-12T01:09:54Z
dc.date.available2020-12-12T01:09:54Z
dc.date.issued2019-08-01
dc.description.abstractThe Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high (Δ VT≈200-300mV-for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.en
dc.description.affiliationUniversity of Sao Paulo LSI/PSI/USP
dc.description.affiliationRio Grande Do sul Federal University UFRGS
dc.description.affiliationUNESP Sao Paulo State University
dc.description.affiliationUnespUNESP Sao Paulo State University
dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2019.8919276
dc.identifier.citationSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.
dc.identifier.doi10.1109/SBMicro.2019.8919276
dc.identifier.scopus2-s2.0-85077200437
dc.identifier.urihttp://hdl.handle.net/11449/198333
dc.language.isoeng
dc.relation.ispartofSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
dc.sourceScopus
dc.subjectMOSFET
dc.subjectNBTI
dc.subjectNW
dc.subjectSOI
dc.titleA negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETsen
dc.typeTrabalho apresentado em evento
dspace.entity.typePublication

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