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Al Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFET

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dc.contributor.authorCarvalho, Henrique L.
dc.contributor.authorRangel, Ricardo C.
dc.contributor.authorSasaki, Katia R. A. [UNESP]
dc.contributor.authorAgopian, Paula G. D. [UNESP]
dc.contributor.authorYojo, Leonardo S.
dc.contributor.authorMartino, Joao A.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionFaculdade de Tecnologia de Sao Paulo
dc.contributor.institutionUniversidade Estadual Paulista (UNESP)
dc.date.accessioned2023-07-29T12:29:20Z
dc.date.available2023-07-29T12:29:20Z
dc.date.issued2022-01-01
dc.description.abstractThis work presents for the first time the experimental and simulated characteristics of a BESOI MOSFET reconfigurable transistor with non-sintered aluminum contact. Without this sintering process, the transistor acquires a higher current for electrons, but doesn't have significant current for holes. This characteristic is opposite to those previously observed in sintered transistors. The thermal process of sintering caused interference in the formation of the Schottky junction, this result can be used to improve future implementations of the BESOI MOSFET.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationFATEC-SP Faculdade de Tecnologia de Sao Paulo
dc.description.affiliationUNESP Sao Paulo State University
dc.description.affiliationUnespUNESP Sao Paulo State University
dc.identifierhttp://dx.doi.org/10.1109/SBMICRO55822.2022.9880960
dc.identifier.citation36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings.
dc.identifier.doi10.1109/SBMICRO55822.2022.9880960
dc.identifier.scopus2-s2.0-85139234763
dc.identifier.urihttp://hdl.handle.net/11449/246010
dc.language.isoeng
dc.relation.ispartof36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
dc.sourceScopus
dc.subjectBESOI MOSFET
dc.subjectaluminum
dc.subjectreconfigurable device
dc.subjectSchottky contact
dc.subjectsource and drain contacts
dc.titleAl Source-Drain Schottky contact enabling N-type (Back Enhanced) BESOI MOSFETen
dc.typeTrabalho apresentado em evento
dspace.entity.typePublication

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