Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis

dc.contributor.authorGomes, Tiago C. [UNESP]
dc.contributor.authorKumar, Dinesh
dc.contributor.authorFugikawa-Santos, Lucas [UNESP]
dc.contributor.authorAlves, Neri [UNESP]
dc.contributor.authorKettle, Jeff
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionBangor University
dc.date.accessioned2019-10-06T17:07:17Z
dc.date.available2019-10-06T17:07:17Z
dc.date.issued2019-05-13
dc.description.abstractThe present study reports a two-level multivariate analysis to optimize the production of anodized aluminum oxide (Al 2 O 3 ) dielectric films for zinc oxide thin-film transistors (TFTs). Fourteen performance parameters were measured and analysis of variance (ANOVA) of the combined responses has been applied to identify how the Al 2 O 3 dielectric fabrication process influences the electrical properties of the TFTs. Using this approach, the levels for the manufacturing factors to achieve optimal overall device performance have been identified and ranked. The cross-checked analysis of the TFT performance parameters demonstrated that the appropriate control of the anodization process can have a higher impact on TFT performance than the use of traditional methods of surface treatment of the dielectric layer. Flexible electronics applications are expected to grow substantially over the next 10 years. Given the complexity and challenges of new flexible electronics components, this multivariate approach could be adopted more widely by the industry to improve the reliability and performance of such devices.en
dc.description.affiliationUNESP - São Paulo State University School of Technology and Sciences
dc.description.affiliationSchool of Electronic Engineering Bangor University
dc.description.affiliationUNESP - São Paulo State University Institute of Geosciences and Exact Sciences Physics Department, Av. 24A 1515
dc.description.affiliationUnespUNESP - São Paulo State University School of Technology and Sciences
dc.description.affiliationUnespUNESP - São Paulo State University Institute of Geosciences and Exact Sciences Physics Department, Av. 24A 1515
dc.format.extent370-379
dc.identifierhttp://dx.doi.org/10.1021/acscombsci.8b00195
dc.identifier.citationACS Combinatorial Science, v. 21, n. 5, p. 370-379, 2019.
dc.identifier.doi10.1021/acscombsci.8b00195
dc.identifier.issn2156-8944
dc.identifier.issn2156-8952
dc.identifier.lattes7607651111619269
dc.identifier.scopus2-s2.0-85064167889
dc.identifier.urihttp://hdl.handle.net/11449/190255
dc.language.isoeng
dc.relation.ispartofACS Combinatorial Science
dc.rights.accessRightsAcesso restrito
dc.sourceScopus
dc.subjectaluminum oxide
dc.subjectanodization
dc.subjectANOVA
dc.subjectdesign of experiments
dc.subjectPlackett-Burman design
dc.subjectthin-film transistors
dc.titleOptimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysisen
dc.typeArtigo
unesp.author.orcid0000-0001-7376-2717[3]
unesp.author.orcid7607651111619269
unesp.departmentFísica, Química e Biologia - FCTpt

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