Low temperature annealing of amorphous gallium arsenide films

dc.contributor.authorCampomanes, R. R.
dc.contributor.authorUgucione, J.
dc.contributor.authorda Silva, JHD
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:28:07Z
dc.date.available2014-05-20T15:28:07Z
dc.date.issued2002-06-01
dc.description.abstractThis work reports the changes in the optical properties produced by annealing of amorphous GaAs at temperatures smaller than or just sufficient to produce crystallization of the material. The films were grown by the flash evaporation technique on glass substrates at room temperature. Optical and structural changes of our samples were monitored through photothermal deflection spectroscopy, optical transmittance and reflectance and X-ray diffraction (XRD). The structural results from XRD detected no crystallization of the films for temperatures up to 240 degreesC. We have observed consistent changes in the optical gap and Urbach energy of the annealed film. The optical gap increases with increasing annealing temperature from 1.17 to 1.32 eV. The Urbach energy decrease from 120 meV (as-grown film) to 105 meV (anneal at 200 degreesC). We propose that these changes are due to a diminution of the tail state defects and/or the relaxation of strained bonds. (C) 2002 Elsevier B.V. B.V. All rights reserved.en
dc.description.affiliationUniv Estadual Paulista, Fac Ciências, Dept Fis, BR-17033360 Bauru, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, Fac Ciências, Dept Fis, BR-17033360 Bauru, SP, Brazil
dc.format.extent259-264
dc.identifierhttp://dx.doi.org/10.1016/S0022-3093(02)01032-3
dc.identifier.citationJournal of Non-crystalline Solids. Amsterdam: Elsevier B.V., v. 304, n. 1-3, p. 259-264, 2002.
dc.identifier.doi10.1016/S0022-3093(02)01032-3
dc.identifier.issn0022-3093
dc.identifier.lattes1134426200935790
dc.identifier.urihttp://hdl.handle.net/11449/38008
dc.identifier.wosWOS:000176121200037
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofJournal of Non-Crystalline Solids
dc.relation.ispartofjcr2.488
dc.relation.ispartofsjr0,722
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.titleLow temperature annealing of amorphous gallium arsenide filmsen
dc.typeArtigo
dcterms.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dcterms.rightsHolderElsevier B.V.
unesp.author.lattes1134426200935790
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt

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