X-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure

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dc.contributor.authorBueno, Cristina F. [UNESP]
dc.contributor.authorRamos, Aline Y.
dc.contributor.authorBailly, Aude
dc.contributor.authorMossang, Eric
dc.contributor.authorScalvi, Luis V. A. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniv Grenoble Alpes
dc.date.accessioned2020-12-10T20:10:39Z
dc.date.available2020-12-10T20:10:39Z
dc.date.issued2020-08-28
dc.description.abstractX-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) data are used for investigating heterostructure samples of GaAs/SnO2. XANES data are used for analyzing the local organization around Eu in the heterostructure formed by GaAs and Eu-doped SnO2. The differences between the XANES data for these samples and data obtained for Eu-doped SnO2 thin films, deposited on glass substrate, are assumed as responsible for the differences in the photoluminescence (PL) spectra concerning the Eu3+ emission, since films deposited on glass substrate do not present Eu3+ PL transitions until the annealing temperature is rather high. Eu3+ emission is explored using two different excitation sources: 350 nm from a Kr+ laser (above SnO2 energy bandgap) and 488 nm from an Ar+ laser (below SnO2 bandgap energy). The existence of more organized regions around the Eu3+ site observed for the heterostructure surface may be associated with the Eu3+ luminescent emission. The main and secondary features in the XANES show that there are differences in the average local Eu environment for the SnO2:Eu isolated thin films and heterostructures, being more organized in the latter. Electrical characterization evidences that the portion of the resistivity reduction that corresponds to photo-ionized intrabandgap states is responsible for the persistent photoconductivity phenomenon in the heterostructures.en
dc.description.affiliationSao Paulo State Univ UNESP, Postgrad Program Mat Sci & Technol POSMAT, Dept Phys FC, Bauru, SP, Brazil
dc.description.affiliationUniv Grenoble Alpes, Inst Neel, CNRS, F-38042 Grenoble, France
dc.description.affiliationUnespSao Paulo State Univ UNESP, Postgrad Program Mat Sci & Technol POSMAT, Dept Phys FC, Bauru, SP, Brazil
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipIdCAPES: 88881.131882/2016-01
dc.description.sponsorshipIdCAPES: 88887.375016/2019-00-CAPES-PRINT
dc.format.extent15
dc.identifierhttp://dx.doi.org/10.1007/s42452-020-03344-3
dc.identifier.citationSn Applied Sciences. Cham: Springer International Publishing Ag, v. 2, n. 9, 15 p., 2020.
dc.identifier.doi10.1007/s42452-020-03344-3
dc.identifier.issn2523-3963
dc.identifier.urihttp://hdl.handle.net/11449/197243
dc.identifier.wosWOS:000563836400005
dc.language.isoeng
dc.publisherSpringer
dc.relation.ispartofSn Applied Sciences
dc.sourceWeb of Science
dc.subjectTin dioxide
dc.subjectGallium arsenide
dc.subjectHeterostructure
dc.subjectElectro-optical properties
dc.titleX-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructureen
dc.typeArtigo
dcterms.licensehttp://www.springer.com/open+access/authors+rights?SGWID=0-176704-12-683201-0
dcterms.rightsHolderSpringer
unesp.departmentFísica - FCpt

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