X-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure
dc.contributor.author | Bueno, Cristina F. [UNESP] | |
dc.contributor.author | Ramos, Aline Y. | |
dc.contributor.author | Bailly, Aude | |
dc.contributor.author | Mossang, Eric | |
dc.contributor.author | Scalvi, Luis V. A. [UNESP] | |
dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
dc.contributor.institution | Univ Grenoble Alpes | |
dc.date.accessioned | 2020-12-10T20:10:39Z | |
dc.date.available | 2020-12-10T20:10:39Z | |
dc.date.issued | 2020-08-28 | |
dc.description.abstract | X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) data are used for investigating heterostructure samples of GaAs/SnO2. XANES data are used for analyzing the local organization around Eu in the heterostructure formed by GaAs and Eu-doped SnO2. The differences between the XANES data for these samples and data obtained for Eu-doped SnO2 thin films, deposited on glass substrate, are assumed as responsible for the differences in the photoluminescence (PL) spectra concerning the Eu3+ emission, since films deposited on glass substrate do not present Eu3+ PL transitions until the annealing temperature is rather high. Eu3+ emission is explored using two different excitation sources: 350 nm from a Kr+ laser (above SnO2 energy bandgap) and 488 nm from an Ar+ laser (below SnO2 bandgap energy). The existence of more organized regions around the Eu3+ site observed for the heterostructure surface may be associated with the Eu3+ luminescent emission. The main and secondary features in the XANES show that there are differences in the average local Eu environment for the SnO2:Eu isolated thin films and heterostructures, being more organized in the latter. Electrical characterization evidences that the portion of the resistivity reduction that corresponds to photo-ionized intrabandgap states is responsible for the persistent photoconductivity phenomenon in the heterostructures. | en |
dc.description.affiliation | Sao Paulo State Univ UNESP, Postgrad Program Mat Sci & Technol POSMAT, Dept Phys FC, Bauru, SP, Brazil | |
dc.description.affiliation | Univ Grenoble Alpes, Inst Neel, CNRS, F-38042 Grenoble, France | |
dc.description.affiliationUnesp | Sao Paulo State Univ UNESP, Postgrad Program Mat Sci & Technol POSMAT, Dept Phys FC, Bauru, SP, Brazil | |
dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
dc.description.sponsorship | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | |
dc.description.sponsorshipId | CAPES: 88881.131882/2016-01 | |
dc.description.sponsorshipId | CAPES: 88887.375016/2019-00-CAPES-PRINT | |
dc.format.extent | 15 | |
dc.identifier | http://dx.doi.org/10.1007/s42452-020-03344-3 | |
dc.identifier.citation | Sn Applied Sciences. Cham: Springer International Publishing Ag, v. 2, n. 9, 15 p., 2020. | |
dc.identifier.doi | 10.1007/s42452-020-03344-3 | |
dc.identifier.issn | 2523-3963 | |
dc.identifier.uri | http://hdl.handle.net/11449/197243 | |
dc.identifier.wos | WOS:000563836400005 | |
dc.language.iso | eng | |
dc.publisher | Springer | |
dc.relation.ispartof | Sn Applied Sciences | |
dc.source | Web of Science | |
dc.subject | Tin dioxide | |
dc.subject | Gallium arsenide | |
dc.subject | Heterostructure | |
dc.subject | Electro-optical properties | |
dc.title | X-ray absorption spectroscopy and Eu3+-emission characteristics in GaAs/SnO2 heterostructure | en |
dc.type | Artigo | |
dcterms.license | http://www.springer.com/open+access/authors+rights?SGWID=0-176704-12-683201-0 | |
dcterms.rightsHolder | Springer | |
unesp.department | Física - FC | pt |