Publicação:
Low-Frequency and Random Telegraph Noise Performance of Ge-Based and III-V Devices on a Si Platform

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dc.contributor.authorClaeys, Cor
dc.contributor.authorAgopian, Paula [UNESP]
dc.contributor.authorAlian, AliRezza
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorFangs, Wen
dc.contributor.authorMartino, Joao
dc.contributor.authorMitard, Jerome
dc.contributor.authorNeves, Felipe
dc.contributor.authorOliviera, Alberto
dc.contributor.authorSimoen, Eddy
dc.contributor.authorJiang, Y. L.
dc.contributor.authorTang, T. A.
dc.contributor.authorHuang, R.
dc.contributor.institutionIMEC
dc.contributor.institutionKatholieke Univ Leuven
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionMicrosyst & Terahertz Res Ctr
dc.contributor.institutionUniv Ghent
dc.date.accessioned2019-10-04T12:15:15Z
dc.date.available2019-10-04T12:15:15Z
dc.date.issued2016-01-01
dc.description.abstractThis review demonstrates the potential of low frequency noise diagnostics for the characterization of Ge-based and III-V technologies processed on a Si platform. The analysis of traps in both gate dielectrics and semiconductor films is illustrated for state-of-the-art devices.en
dc.description.affiliationIMEC, Leuven, Belgium
dc.description.affiliationKatholieke Univ Leuven, EE Dept, Leuven, Belgium
dc.description.affiliationUniv Estadual Paulista, UNESP, Sao Joao Da Boa Vista, Brazil
dc.description.affiliationUniv Sao Paulo, PSI, LSI, Sao Paulo, Brazil
dc.description.affiliationMicrosyst & Terahertz Res Ctr, Chengdu, Sichuan, Peoples R China
dc.description.affiliationUniv Ghent, Dept Solid State Phys, Ghent, Belgium
dc.description.affiliationUnespUniv Estadual Paulista, UNESP, Sao Joao Da Boa Vista, Brazil
dc.format.extent288-293
dc.identifier.citation2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict). New York: Ieee, p. 288-293, 2016.
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.urihttp://hdl.handle.net/11449/184615
dc.identifier.wosWOS:000478951000076
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict)
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.titleLow-Frequency and Random Telegraph Noise Performance of Ge-Based and III-V Devices on a Si Platformen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee
dspace.entity.typePublication
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]

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