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Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs

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dc.contributor.authorPerina, Welder F.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorAgopian, Paula Ghedini D. [UNESP]
dc.contributor.authorIEEE
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2020-12-10T17:32:55Z
dc.date.available2020-12-10T17:32:55Z
dc.date.issued2019-01-01
dc.description.abstractThis paper shows the influence of channel width (W-NW) and channel length (L) on intrinsic voltage gain (A(V)) and on unit-gain frequency (f(t)) of omega-gate nanowire SOI MOSFET. The f(t) is calculated taking into consideration the experimental gate capacitance. The device showed excellent electrostatic control for the W-NW of 10 nm, which improved transconductance, consequently, improving both A(V) and f(t). This technology showed values of A(V) around 80 dB and a f(t) of over 200 GHz, proving that this device is an excellent for future analog applications like 5G communications and Internet-of-Things (IoT).en
dc.description.affiliationUniv Sao Paulo, LSI PSI USP, Sao Paulo, Brazil
dc.description.affiliationSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, Brazil
dc.description.affiliationUnespSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, Brazil
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipCEA-LETI
dc.format.extent4
dc.identifier.citation2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.
dc.identifier.urihttp://hdl.handle.net/11449/195387
dc.identifier.wosWOS:000534490900008
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019)
dc.sourceWeb of Science
dc.subjectSOI
dc.subjectOmega-gate
dc.subjectNanowire
dc.subjectUnit-gain Frequency
dc.subjectIntrinsic Voltage Gain
dc.titleIntrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETsen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee
dspace.entity.typePublication

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