Influence of ALN crystallinity on SAP waveguides

dc.contributor.authorAlvarado, M. A.
dc.contributor.authorPereyra, I.
dc.contributor.authorCarvalho, D. O. [UNESP]
dc.contributor.authorAlayo, M. I.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T16:47:25Z
dc.date.available2018-12-11T16:47:25Z
dc.date.issued2016-08-15
dc.description.abstractIn this work, a comparison in the behavior of highly c-axis oriented and amorphous Aluminum Nitride (AlN) films as core layer in self-aligned pedestal (SAP) optical waveguides is presented, aiming to study the influence of AlN crystallinity in waveguiding. Optical losses characterizations were measured in these devices using the top-view technique at a visible wavelength (wavelength at 547 nm). AlN films were examined by X-ray diffraction (XRD) to determine their crystalline structure. Furthermore, Scanning Electron microscopy (SEM) technique was utilized to verify the geometrical definition of the optical waveguide.en
dc.description.affiliationDepartamento de Engenharia de Sistemas Eletrônicos Escola Politécnica da Universidade de São Paulo
dc.description.affiliationUniversidade Estadual Paulista UNESP
dc.description.affiliationUnespUniversidade Estadual Paulista UNESP
dc.identifierhttp://dx.doi.org/10.1364/LAOP.2016.LTu4A.28
dc.identifier.citationOptics InfoBase Conference Papers.
dc.identifier.doi10.1364/LAOP.2016.LTu4A.28
dc.identifier.scopus2-s2.0-85019532391
dc.identifier.urihttp://hdl.handle.net/11449/169742
dc.language.isoeng
dc.relation.ispartofOptics InfoBase Conference Papers
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.titleInfluence of ALN crystallinity on SAP waveguidesen
dc.typeTrabalho apresentado em evento

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