Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET

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dc.contributor.authorTeixeira, Fernando F.
dc.contributor.authorAgopian, Paula G. D. [UNESP]
dc.contributor.authorMartino, Joao A.
dc.contributor.authorIEEE
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-11-26T15:37:53Z
dc.date.available2018-11-26T15:37:53Z
dc.date.issued2016-01-01
dc.description.abstractIn this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.en
dc.description.affiliationUniv Sao Paulo, LSI PSI USP, Sao Paulo, Brazil
dc.description.affiliationUNESP Univ Estadual Paulista, Sao Joao Da Boa Vista, Brazil
dc.description.affiliationUnespUNESP Univ Estadual Paulista, Sao Joao Da Boa Vista, Brazil
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.format.extent4
dc.identifier.citation2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2016.
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.urihttp://hdl.handle.net/11449/159310
dc.identifier.wosWOS:000392469000019
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2016 31st Symposium On Microelectronics Technology And Devices (sbmicro)
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectSOI
dc.subjectUltra Thin Body and Buried Oxide
dc.subjectSpacer
dc.subjectself-aligned, underlap
dc.titleInfluence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFETen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]

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