Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
dc.contributor.author | Teixeira, Fernando F. | |
dc.contributor.author | Agopian, Paula G. D. [UNESP] | |
dc.contributor.author | Martino, Joao A. | |
dc.contributor.author | IEEE | |
dc.contributor.institution | Universidade de São Paulo (USP) | |
dc.contributor.institution | Universidade Estadual Paulista (Unesp) | |
dc.date.accessioned | 2018-11-26T15:37:53Z | |
dc.date.available | 2018-11-26T15:37:53Z | |
dc.date.issued | 2016-01-01 | |
dc.description.abstract | In this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions. | en |
dc.description.affiliation | Univ Sao Paulo, LSI PSI USP, Sao Paulo, Brazil | |
dc.description.affiliation | UNESP Univ Estadual Paulista, Sao Joao Da Boa Vista, Brazil | |
dc.description.affiliationUnesp | UNESP Univ Estadual Paulista, Sao Joao Da Boa Vista, Brazil | |
dc.description.sponsorship | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
dc.description.sponsorship | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
dc.description.sponsorship | Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) | |
dc.format.extent | 4 | |
dc.identifier.citation | 2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2016. | |
dc.identifier.lattes | 0496909595465696 | |
dc.identifier.orcid | 0000-0002-0886-7798 | |
dc.identifier.uri | http://hdl.handle.net/11449/159310 | |
dc.identifier.wos | WOS:000392469000019 | |
dc.language.iso | eng | |
dc.publisher | Ieee | |
dc.relation.ispartof | 2016 31st Symposium On Microelectronics Technology And Devices (sbmicro) | |
dc.rights.accessRights | Acesso aberto | |
dc.source | Web of Science | |
dc.subject | SOI | |
dc.subject | Ultra Thin Body and Buried Oxide | |
dc.subject | Spacer | |
dc.subject | self-aligned, underlap | |
dc.title | Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET | en |
dc.type | Trabalho apresentado em evento | |
dcterms.license | http://www.ieee.org/publications_standards/publications/rights/rights_policies.html | |
dcterms.rightsHolder | Ieee | |
unesp.author.lattes | 0496909595465696[2] | |
unesp.author.orcid | 0000-0002-0886-7798[2] |