Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET

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Data

2016-01-01

Autores

Teixeira, Fernando F.
Agopian, Paula G. D. [UNESP]
Martino, Joao A.
IEEE

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Título de Volume

Editor

Ieee

Resumo

In this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.

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Palavras-chave

SOI, Ultra Thin Body and Buried Oxide, Spacer, self-aligned, underlap

Como citar

2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). New York: Ieee, 4 p., 2016.

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