Memristive behavior of the SnO2/TiO2 interface deposited by sol–gel

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dc.contributor.authorBoratto, Miguel H. [UNESP]
dc.contributor.authorRamos, Roberto A. [UNESP]
dc.contributor.authorCongiu, Mirko [UNESP]
dc.contributor.authorGraeff, Carlos F.O. [UNESP]
dc.contributor.authorScalvi, Luis V.A. [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T17:31:51Z
dc.date.available2018-12-11T17:31:51Z
dc.date.issued2017-07-15
dc.description.abstractA novel and cheap Resistive Random Access Memory (RRAM) device is proposed within this work, based on the interface between antimony doped Tin Oxide (4%at Sb:SnO2) and Titanium Oxide (TiO2) thin films, entirely prepared through a low-temperature sol–gel process. The device was fabricated on glass slides using evaporated aluminum electrodes. Typical bipolar memristive behavior under cyclic voltage sweeping and square wave voltages, with well-defined high and low resistance states (HRS and LRS), and set and reset voltages are shown in our samples. The switching mechanism, explained by charges trapping/de-trapping by defects in the SnO2/TiO2 interface, is mainly driven by the external electric field. The calculated on/off ratio was about 8 × 102 in best conditions with good reproducibility over repeated measurement cycles under cyclic voltammetry and about 102 under applied square wave voltage.en
dc.description.affiliationSão Paulo State University (Unesp) School of Sciences POSMAT—Post-graduate program in Materials Science and Technology
dc.description.affiliationSão Paulo State University (Unesp) School of Sciences Department of Physics
dc.description.affiliationUnespSão Paulo State University (Unesp) School of Sciences POSMAT—Post-graduate program in Materials Science and Technology
dc.description.affiliationUnespSão Paulo State University (Unesp) School of Sciences Department of Physics
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdCNPq: 2016/17302-8
dc.description.sponsorshipIdCAPES: 471359/2013-0
dc.format.extent278-281
dc.identifierhttp://dx.doi.org/10.1016/j.apsusc.2017.03.132
dc.identifier.citationApplied Surface Science, v. 410, p. 278-281.
dc.identifier.doi10.1016/j.apsusc.2017.03.132
dc.identifier.file2-s2.0-85015873321.pdf
dc.identifier.issn0169-4332
dc.identifier.scopus2-s2.0-85015873321
dc.identifier.urihttp://hdl.handle.net/11449/178729
dc.language.isoeng
dc.relation.ispartofApplied Surface Science
dc.relation.ispartofsjr1,093
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectMemristor
dc.subjectNon-volatile memory
dc.subjectRRAM
dc.subjectSnO2/TiO2
dc.subjectSol–gel
dc.subjectThin film
dc.titleMemristive behavior of the SnO2/TiO2 interface deposited by sol–gelen
dc.typeArtigo
unesp.author.lattes5268607684223281[4]
unesp.author.orcid0000-0003-0162-8273[4]
unesp.departmentFísica - FCpt

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