Multi-layers Lateral SOI PIN Photodiodes for Solar Cells Applications

dc.contributor.authorSilva, F. A. da [UNESP]
dc.contributor.authorDoria, R. T.
dc.contributor.authorAndrade, M. G. C. de [UNESP]
dc.contributor.authorIEEE
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionCtr Univ FEI
dc.date.accessioned2020-12-10T17:32:57Z
dc.date.available2020-12-10T17:32:57Z
dc.date.issued2019-01-01
dc.description.abstractIn this paper, a lateral PIN photodiode based on a SOI wafer has been studied through numerical simulations. This device can be used as a solar cell embedded in a CMOS circuit in order to propose autonomous ultralow-power circuits (ULP). Efficiency behavior has been analyzed for different semiconductor materials and configurations in order to reach the best performance. The results indicate that a layer with a different semiconductor, with different characteristics such as forbidden band, mobility and light absorption, improves the generated power in the device, suggesting that the cell can feed circuits that need larger power.en
dc.description.affiliationSao Paulo State Univ, UNESP, Inst Sci & Technol, Sorocaba, Brazil
dc.description.affiliationCtr Univ FEI, Sao Bernardo Do Campo, Brazil
dc.description.affiliationUnespSao Paulo State Univ, UNESP, Inst Sci & Technol, Sorocaba, Brazil
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipIdCNPq: 447905/2014-7
dc.format.extent4
dc.identifier.citation2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.
dc.identifier.urihttp://hdl.handle.net/11449/195389
dc.identifier.wosWOS:000534490900022
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019)
dc.sourceWeb of Science
dc.subjectSolar cells
dc.subjectPIN photodiode
dc.subjectMulti-layer
dc.subjectGermanium
dc.titleMulti-layers Lateral SOI PIN Photodiodes for Solar Cells Applicationsen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee

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