Improvement of gm/ID method for detection of self-heating effects

dc.contributor.authorMori, C. A.B.
dc.contributor.authorAgopian, P. O.D. [UNESP]
dc.contributor.authorMartino, J. A.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T16:54:29Z
dc.date.available2018-12-11T16:54:29Z
dc.date.issued2018-01-01
dc.description.abstractThis paper presents an improvement on the use of the transistor efficiency to verify the presence of self-heating effects using only DC measurements. Applying this improved method on FinFET devices allowed the establishment of a comparison of the self-heating effect among devices with different channel lengths, despite their different channel length modulation effects.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationSao Paulo State University (UNESP)
dc.description.affiliationUnespSao Paulo State University (UNESP)
dc.format.extent73-78
dc.identifierhttp://dx.doi.org/10.1149/08508.0073ecst
dc.identifier.citationECS Transactions, v. 85, n. 8, p. 73-78, 2018.
dc.identifier.doi10.1149/08508.0073ecst
dc.identifier.file2-s2.0-85050153571.pdf
dc.identifier.issn1938-5862
dc.identifier.issn1938-6737
dc.identifier.scopus2-s2.0-85050153571
dc.identifier.urihttp://hdl.handle.net/11449/171228
dc.language.isoeng
dc.relation.ispartofECS Transactions
dc.relation.ispartofsjr0,225
dc.relation.ispartofsjr0,225
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.titleImprovement of gm/ID method for detection of self-heating effectsen
dc.typeTrabalho apresentado em evento

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