Fabrication and Electrical Characterization of ISFET for H2O2sensing
Nenhuma Miniatura disponível
Data
2022-01-01
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Tipo
Trabalho apresentado em evento
Direito de acesso
Resumo
This work presents the fabrication and electrical characterization of the Ion-Sensitive Field Effect Transistor (ISFET) exposed to hydrogen peroxide solutions. Two configurations were set up to evaluate the sensitivity of the devices to the concentration of the solution. First, measurements with one electrode in the sample solution (contained over the gate area) were performed; however, due to the prevalence of secondary effects, the results may not be directly related to the characteristics of the solution. The second method, using two electrodes in the sample solution, shows a higher sensitivity at increasing H2O2 concentrations, and in decreasing intervals, when compared to measurements with one electrode.
Descrição
Palavras-chave
Idioma
Inglês
Como citar
36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings.
