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Dipole relaxation current in n-type AlxGa1-xAs

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dc.contributor.authorScalvi, Luis Vicente de Andrade [UNESP]
dc.contributor.authorOliveira, L.
dc.contributor.authorLi, M. S.
dc.contributor.authorManasreh, M. O.
dc.contributor.authorvonBardeleben, H. J.
dc.contributor.authorPomrenke, G. S.
dc.contributor.authorLannoo, M.
dc.contributor.authorTalwar, D. N.
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:28:16Z
dc.date.available2014-05-20T15:28:16Z
dc.date.issued1994-01-01
dc.description.affiliationUNESP,DEPT FIS,BR-17033 BAURU,SP,BRAZIL
dc.description.affiliationUnespUNESP,DEPT FIS,BR-17033 BAURU,SP,BRAZIL
dc.format.extent285-290
dc.identifier.citationPhysics and Applications of Defects In Advanced Semiconductors. Pittsburgh: Materials Research Soc, v. 325, p. 285-290, 1994.
dc.identifier.issn0272-9172
dc.identifier.lattes7730719476451232
dc.identifier.orcid0000-0001-5762-6424
dc.identifier.urihttp://hdl.handle.net/11449/38104
dc.identifier.wosWOS:A1994BA45Z00038
dc.language.isoeng
dc.publisherMaterials Research Society
dc.relation.ispartofPhysics and Applications of Defects In Advanced Semiconductors
dc.relation.ispartofsjr0,139
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.titleDipole relaxation current in n-type AlxGa1-xAsen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://journals.cambridge.org/action/displaySpecialPage?pageId=4676#
dcterms.rightsHolderMaterials Research Soc
dspace.entity.typePublication
unesp.author.lattes7730719476451232[1]
unesp.author.orcid0000-0001-5762-6424[1]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Ciências, Baurupt
unesp.departmentFísica - FCpt

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Bauru - FC - Faculdade de Ciências