Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes
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Ieee-inst Electrical Electronics Engineers Inc
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Acesso aberto
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Resumo
An experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET devices fabricated in different shallow trench isolation (STI) processes is presented, taking into consideration devices with fin widths from 100 nm (planar-like) down to 20 nm. In addition, the correlation among LFN parameters, hole mobility and threshold voltage, is also evaluated. The carrier number fluctuation (Delta N) model is confirmed as dominant mechanism for all studied Ge pFinFETs and there is no correlation with the used STI process. From the LFN, it is evidenced that the Coulomb scattering mobility mechanism plays an important role for STI-first process, resulting in a mobility degradation.
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Ge pFinFET, low-frequency noise (LFN), shallow trench isolation (STI) first, STI last
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Inglês
Citação
Ieee Transactions On Electron Devices. Piscataway: Ieee-inst Electrical Electronics Engineers Inc, v. 63, n. 10, p. 4031-4037, 2016.
