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Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes

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dc.contributor.authorOliveira, Alberto V. de
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorAgopian, Paula G. D. [UNESP]
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorLanger, Robert
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron Voon-Yew
dc.contributor.authorClaeys, Cor
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionKatholieke Univ Leuven
dc.contributor.institutionIMEC
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionNatl Univ Singapore
dc.date.accessioned2018-11-26T15:31:25Z
dc.date.available2018-11-26T15:31:25Z
dc.date.issued2016-10-01
dc.description.abstractAn experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET devices fabricated in different shallow trench isolation (STI) processes is presented, taking into consideration devices with fin widths from 100 nm (planar-like) down to 20 nm. In addition, the correlation among LFN parameters, hole mobility and threshold voltage, is also evaluated. The carrier number fluctuation (Delta N) model is confirmed as dominant mechanism for all studied Ge pFinFETs and there is no correlation with the used STI process. From the LFN, it is evidenced that the Coulomb scattering mobility mechanism plays an important role for STI-first process, resulting in a mobility degradation.en
dc.description.affiliationUniv Sao Paulo, BR-05508010 Sao Paulo, Brazil
dc.description.affiliationKatholieke Univ Leuven, B-3001 Leuven, Belgium
dc.description.affiliationIMEC, B-3001 Leuven, Belgium
dc.description.affiliationUniv Estadual Paulista, BR-13876750 Sao Joao Da Boa Vista, Brazil
dc.description.affiliationNatl Univ Singapore, Singapore 117575, Singapore
dc.description.affiliationKatholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium
dc.description.affiliationUnespUniv Estadual Paulista, BR-13876750 Sao Joao Da Boa Vista, Brazil
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipFWO
dc.description.sponsorshipLogic IIAP Program
dc.format.extent4031-4037
dc.identifierhttp://dx.doi.org/10.1109/TED.2016.2598288
dc.identifier.citationIeee Transactions On Electron Devices. Piscataway: Ieee-inst Electrical Electronics Engineers Inc, v. 63, n. 10, p. 4031-4037, 2016.
dc.identifier.doi10.1109/TED.2016.2598288
dc.identifier.fileWOS000384575700032.pdf
dc.identifier.issn0018-9383
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.urihttp://hdl.handle.net/11449/159109
dc.identifier.wosWOS:000384575700032
dc.language.isoeng
dc.publisherIeee-inst Electrical Electronics Engineers Inc
dc.relation.ispartofIeee Transactions On Electron Devices
dc.relation.ispartofsjr0,839
dc.rights.accessRightsAcesso abertopt
dc.sourceWeb of Science
dc.subjectGe pFinFET
dc.subjectlow-frequency noise (LFN)
dc.subjectshallow trench isolation (STI) first
dc.subjectSTI last
dc.titleLow-Frequency Noise Assessment of Different Ge pFinFET STI Processesen
dc.typeArtigopt
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee-inst Electrical Electronics Engineers Inc
dspace.entity.typePublication
unesp.author.lattes0496909595465696[4]
unesp.author.orcid0000-0002-0886-7798[4]
unesp.campusUniversidade Estadual Paulista (UNESP), Faculdade de Engenharia, São João da Boa Vistapt

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São João da Boa Vista - FESJBV - Faculdade de Engenharia, São João da Boa Vista