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On the assessment of electrically active defects in high-mobility materials and devices

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dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorDe Oliveira, Alberto Vinicius
dc.contributor.authorNi, Kai
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorDer Agopian, Paula Ghedini [UNESP]
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorReed, Robert A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.contributor.institutionImec
dc.contributor.institutionGhent University
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionVanderbilt University
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionKU Leuven
dc.date.accessioned2018-12-11T16:49:13Z
dc.date.available2018-12-11T16:49:13Z
dc.date.issued2017-07-31
dc.description.abstractA possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.en
dc.description.affiliationImec, Kapeldreef 75
dc.description.affiliationGhent University Depart. Solid State Sciences, Krijgslaan 28 1S1
dc.description.affiliationUniversity of Sao Paulo
dc.description.affiliationDepartment of Electrical Engineering and Computer Science Vanderbilt University
dc.description.affiliationUNESP
dc.description.affiliationEE Depart. KU Leuven, Kasteelpark Arenberg 10
dc.description.affiliationUnespUNESP
dc.format.extent300-303
dc.identifierhttp://dx.doi.org/10.1109/ICSICT.2016.7998903
dc.identifier.citation2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 300-303.
dc.identifier.dimensionspub.1094576268
dc.identifier.doi10.1109/ICSICT.2016.7998903
dc.identifier.isbn978-1-4673-9717-9
dc.identifier.isbn978-1-4673-9719-3
dc.identifier.orcid0000-0002-5849-3384
dc.identifier.orcid0000-0002-9289-5897
dc.identifier.orcid0000-0001-7419-2701
dc.identifier.orcid0000-0002-0772-5501
dc.identifier.orcid0000-0003-4257-7142
dc.identifier.orcid0000-0001-8121-6513
dc.identifier.orcid0000-0003-2418-6404
dc.identifier.orcid0000-0002-8062-3165
dc.identifier.orcid0000-0002-6634-4709
dc.identifier.orcid0000-0002-7467-2921
dc.identifier.orcid0000-0002-7422-079X
dc.identifier.orcid0000-0001-9303-9980
dc.identifier.scopus2-s2.0-85028684734
dc.identifier.urihttp://hdl.handle.net/11449/170090
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.ispartof2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
dc.rights.accessRightsAcesso abertopt
dc.sourceScopus
dc.sourceDimensions
dc.titleOn the assessment of electrically active defects in high-mobility materials and devicesen
dc.typeTrabalho apresentado em eventopt
dspace.entity.typePublication

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