Publication: Phase separation suppression in InGaN epitaxial layers due to biaxial strain
Loading...
Date
Advisor
Coadvisor
Graduate program
Undergraduate course
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Type
Article
Access right
Acesso aberto
Abstract
Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics.
Description
Keywords
Language
English
Citation
Applied Physics Letters. Melville: Amer Inst Physics, v. 80, n. 5, p. 769-771, 2002.
