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Phase separation suppression in InGaN epitaxial layers due to biaxial strain

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dc.contributor.authorTabata, A.
dc.contributor.authorTeles, L. K.
dc.contributor.authorScolfaro, LMR
dc.contributor.authorLeite, JR
dc.contributor.authorKharchenko, A.
dc.contributor.authorFrey, T.
dc.contributor.authorAs, D. J.
dc.contributor.authorSchikora, D.
dc.contributor.authorLischka, K.
dc.contributor.authorFurthmuller, J.
dc.contributor.authorBechstedt, F.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniv Gesamthsch Paderborn
dc.contributor.institutionUniv Jena
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:30:41Z
dc.date.available2014-05-20T15:30:41Z
dc.date.issued2002-02-04
dc.description.abstractPhase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics.en
dc.description.affiliationUniv São Paulo, Inst Fis, BR-05315970 São Paulo, Brazil
dc.description.affiliationUniv Gesamthsch Paderborn, D-33095 Paderborn, Germany
dc.description.affiliationUniv Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany
dc.description.affiliationUniv Estadual Paulista, BR-17033360 Bauva, SP, Brazil
dc.description.affiliationUnespUniv Estadual Paulista, BR-17033360 Bauva, SP, Brazil
dc.format.extent769-771
dc.identifierhttp://dx.doi.org/10.1063/1.1436270
dc.identifier.citationApplied Physics Letters. Melville: Amer Inst Physics, v. 80, n. 5, p. 769-771, 2002.
dc.identifier.doi10.1063/1.1436270
dc.identifier.fileWOS000173617700022.pdf
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11449/40011
dc.identifier.wosWOS:000173617700022
dc.language.isoeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relation.ispartofApplied Physics Letters
dc.relation.ispartofjcr3.495
dc.relation.ispartofsjr1,382
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.titlePhase separation suppression in InGaN epitaxial layers due to biaxial strainen
dc.typeArtigo
dcterms.licensehttp://publishing.aip.org/authors/web-posting-guidelines
dcterms.rightsHolderAmer Inst Physics
dspace.entity.typePublication
unesp.author.lattes9354064620643611[1]
unesp.author.orcid0000-0002-8713-2094[2]
unesp.author.orcid0000-0002-9389-0238[1]

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