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Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET

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dc.contributor.authorTeixeira, Fernando F.
dc.contributor.authorAgopian, Paula G.D. [UNESP]
dc.contributor.authorMartino, Joao A.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T16:45:14Z
dc.date.available2018-12-11T16:45:14Z
dc.date.issued2016-11-02
dc.description.abstractIn this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material. On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationUNESP Univ. Estadual Paulista
dc.description.affiliationUnespUNESP Univ. Estadual Paulista
dc.identifierhttp://dx.doi.org/10.1109/SBMicro.2016.7731330
dc.identifier.citationSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.
dc.identifier.doi10.1109/SBMicro.2016.7731330
dc.identifier.lattes0496909595465696
dc.identifier.orcid0000-0002-0886-7798
dc.identifier.scopus2-s2.0-85007349339
dc.identifier.urihttp://hdl.handle.net/11449/169292
dc.language.isoeng
dc.relation.ispartofSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
dc.rights.accessRightsAcesso aberto
dc.sourceScopus
dc.subjectself-aligned
dc.subjectSOI
dc.subjectSpacer
dc.subjectUltra Thin Body and Buried Oxide
dc.subjectunderlap
dc.titleInfluence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFETen
dc.typeTrabalho apresentado em evento
dspace.entity.typePublication
unesp.author.lattes0496909595465696[2]
unesp.author.orcid0000-0002-0886-7798[2]

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